Перегляд за автором "Zenya, I."

Сортувати за: Порядок: Результатів:

  • Chugai, O.; Ryzhikov, V.; Starzhinskiy, N.; Oleynik, S.; Katrunov, K.; Zenya, I. (Functional Materials, 2004)
    Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc ...
  • Ryzhikov, V.; Starzhinskiy, N.; Katrunov, K.; Grinyov, B.; Nekrasov, V.; Silin, V.; Spasov, V.; Galich, Yu.; Verbitskiy, O.; Zenya, I. (Functional Materials, 2004)
    In a broad energy range of X-ray radiation (U = 2 175 kV), we have studied output characteristics (light output, quantum yield of luminescence, etc.) of scintillators based on ZnSe crystals, as well as scintillators ...
  • Ryzhikov, V.; Starzhinskiy, N.; Seminozhenko, V.; Grinyov, B.; Nagornaya, L.; Spasov, V.; Katrunov, K.; Zenya, I.; Vyagin, O. (Functional Materials, 2004)
    Data are presented on the influence of various factors upon luminescence kinetics of scintillator crystals based on activated ZnSe, Csl, CWO and GSO. It is shown that the isovalent dopant type substantially affects the ...
  • Ryzhikov, V.; Starzhinskiy, N.; Chugai, O.; Seminozhenko, V.; Migal, V.; Komar, V.; Klimenko, I.; Katrunov, K.; Abashin, S.; Oleinik, S.; Sulima, S.; Zenya, I. (Functional Materials, 2004)
    To determine the kinetics of pre-threshold defect formation, studies have been carried out of dielectric permittivity of isovalently doped zinc selenide and Cd₁₋ₓZnₓTe crystals (x = 0.16). X-ray irradiation of the samples ...
  • Ryzhikov, V.; Starzhinskiy, N.; Chujai, O.; Migal, V.; Komar, V.; Katrunov, K.; Oleinik, S.; Zenya, I. (Functional Materials, 2004)
    Using methods of photodielectric spectroscopy, studies have been carried out of the energy level structure of the defect complexes in isovalently doped zinc selenide crystals. On variation of light wavelength (λ), small ...