Перегляд за автором "Yukhymchuk, V.O."

Сортувати за: Порядок: Результатів:

  • Klyui, M.I.; Temchenko, V.P.; Gryshkov, O.P.; Dubok, V.A.; Kladko, V.P.; Kuchuk, A.V.; Dzhagan, V.M.; Yukhymchuk, V.O.; Kiselov, V.S. (Functional Materials, 2013)
    Silicon-carbide (SiC) ceramics synthesized using forced infiltration and coated with bioactive hydroxyapatite (HA), represents a great potential for replacement of traditional titanium medical implants. In this paper the ...
  • Ponomaryov, S.S.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local ...
  • Kiselov, V.S.; Kalabukhova, E.N.; Sitnikov, A.A.; Lytvyn, P.M.; Poludin, V.I.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Two types of wood-based biomorphous SiC composites with different microstructure were obtained by infiltration of carbon template with liquid or vapour silicon. The oak, pine, lilac, walnut, acacia woods available in ...
  • Yukhymchuk, V.O.; Hreshchuk, O.M.; Valakh, M.Ya.; Skoryk, M.A.; Efanov, V.S.; Matveevskaya, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The efficient SERS (surface enhanced Raman scattering) substrates that are films of nanoparticles (NP) of the “core–shell” type, where the core of SiO2, and the shell of gold nanoparticles, were developed in this work. ...
  • Yaremko, A.M.; Yukhymchuk, V.O.; Dzhagan, V.M.; Valakh, M.Ya.; Azhniuk, Yu.M.; Baran, J.; Ratajczak, H.; Drozd, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be ...
  • Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...
  • Nechyporuk, B.D.; Olekseyuk, I.D.; Yukhymchuk, V.O.; Filonenko, V.V.; Mazurets, I.I.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering ...
  • Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Babichuk, I.S.; Yukhymchuk, V.O.; Semenenko, M.O.; Klyui, N.I.; Caballero, R.; Hreshchuk, O.M.; Lemishko, L.S.; Babichuk, L.V.; Ganus, V.O.; Leon, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Optical constants of Cu₂ZnSnS₄ thin films formed using thermal annealing of pre-deposited layers of copper, zinc and tin sulphides on glass substrates at different temperatures and ambient atmosphere were determined. It ...
  • Kunets, V.P.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have employed the absorption and Raman spectroscopies to study thermostimulated changes in an ensemble of CdSXSe₁₋X quantum dots embedded into a borosilicate glass matrix. It is shown that additional annealing of the ...
  • Rudko, G.Yu.; Vorona, I.P.; Indutnyy, I.Z.; Ishchenko, S.S.; Shepeliavyi, P.E.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered ...
  • Yukhymchuk, V.O.; Kostyukevych, S.A.; Dzhagan, V.M.; Milekhin, A.G.; Rodyakina, E.E.; Yanchuk, I.B.; Shepeliavy, P.Ye.; Valakh, M.Ya.; Kostyukevych, K.V.; Lysiuk, V.O.; Tverdokhlib, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Preparation and study of laterally ordered and disordered arrays of Au nanoislands as SERS substrates are reported. Developed technology allows obtaining SERS substrates with long-term stability (up to six months), efficient ...
  • Kiselov, V.S.; Lytvyn, O.S.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source ...
  • Konchits, A.A.; Shanina, B.D.; Valakh, M.Ya.; Yanchuk, I.B.; Yukhymchuk, V.O.; Yefanov, A.V.; Krasnovyd, S.V.; Skoryk, M.A. (Functional Materials, 2014)
    The correlation between morphology, local structure and magnetic properties of the different origin shungite material with nanocarbon content 25-40 wt. % was studied by SEM, EPR, and Raman scattering methods. It was ...
  • Valakh, M.Ya.; Gamov, D.V.; Dzhagan, V.M.; Lytvyn, O.S.; Melnik, V.P.; Romanjuk, B.M.; Popov, V.G.; Yukhymchuk, V.O. (Functional Materials, 2006)
    The possibility to obtain a heterosystem consisting of the upper partially strained and lower relaxed layers by gradient in situ doping of SiGe layers with carbon is considered. The properties of the as-grown and annealed ...
  • Yukhymchuk, V.O.; Kiselev, V.S.; Belyaev, A.E.; Chursanova, M.V.; Danailov, M.; Valakh, M.Ya. (Functional Materials, 2010)
  • Yaremko, A.M.; Yukhymchuk, V.O.; Romanyuk, Yu.A.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” ...
  • Babichuk, I.S.; Yukhymchuk, V.O.; Dzhagan, V.M.; Valakh, M.Ya.; Leon, M.; Yanchuk, I.B.; Gule, E.G.; Greshchuk, O.M. (Functional Materials, 2013)
    The structure of Cu₂ZnSnS₄ films was investigated by Raman spectroscopy, scanning electron microscopy, energy dispersive X-ray spectrometry, optical reflectance and photoluminescence. The films were formed by thermal ...
  • Neimash, V.B.; Poroshin, V.M.; Shepeliavyi, P.Ye.; Yukhymchuk, V.O.; Melnyk, V.V.; Makara, M.A.; Kuzmich, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis ...