The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...

Studied were the reflection spectra of dynamically chemically etched n-GaAs (100) single crystals with electron concentration of 10¹⁸ to 5·10¹⁸ cm⁻³ in the 1.4-25 μm range as well as the electroreflection ones in 1.3-1.6 ...

The contribution of the real (preliminary chemically etched) (110) surface of n-Ge into electroreflectance effect (energy range 1.9-2.6 eV) basing on polarization anisotropy of electrooptical effect has been separated under ...