Перегляд за автором "Tkachuk, I.G."

Сортувати за: Порядок: Результатів:

  • Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe 
    Tkachuk, I.G.; Orletsky, I.G.; Kovalyuk, Z.D.; Marianchuk, P.D. (Functional Materials, 2018)
    Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of ...
  • Excitonic photoconductivity of heterostructures based on gallium and indium selenides 
    Katerynchuk, V.M.; Kovalyuk, Z.D.; Tkachuk, I.G. (Functional Materials, 2017)
    Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic ...
  • Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis 
    Kushnir, B.V.; Kovalyuk, Z.D.; Katerynchuk, V.M.; Netyaga, V.V.; Tkachuk, I.G. (Functional Materials, 2017)
    A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature ...