Gentsar, P.O.; Vlasenko, O.I.; Vuichyk, M.V.; Stronski, O.V.
(Functional Materials, 2009)
Studied were the reflection spectra of dynamically chemically etched n-GaAs (100) single crystals with electron concentration of 10¹⁸ to 5·10¹⁸ cm⁻³ in the 1.4-25 μm range as well as the electroreflection ones in 1.3-1.6 ...