Перегляд за автором "Stratiychuk, I.B."

Сортувати за: Порядок: Результатів:

  • Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition 
    Levchenko, I.V.; Tomashyk, V.M.; Stratiychuk, I.B.; Malanych, G.P.; Stanetska, A.S.; Korchovyi, A.A. (Functional Materials, 2018)
    The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant ...
  • Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions 
    Pavlovich, I.I.; Tomashik, Z.F.; Stratiychuk, I.B.; Tomashik, V.M.; Savchuk, O.A.; Kravtsova, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p- (Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant compositions was investigated. The dependences of ...
  • Chemical polishing of InAs, InSb, GaAs and GaSb 
    Levchenko, I.V.; Tomashyk, V.M.; Stratiychuk, I.B.; Malanych, G.P.; Stanetska, A.S.; Korchovyi, A.A. (Functional Materials, 2017)
    The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and ...
  • Nanodimensional formations on the CdTe and ZnₓCd₁₋ₓTe surfaces at chemical etching 
    Tomashyk, Z.F.; Tomashyk, V.M.; Hnativ, I.I.; Stratiychuk, I.B.; Moravec, P.; Franc, J.; Ivanitska, V. (Functional Materials, 2008)
    Aperiodic nanodimensional needle-shaped formations have been shown to appear on the polished surfaces of undoped CdTe and Cd₁₋ₓZn₁₋ₓTe single crystals at one- and two-stage chemical treatment including consecutive procedures ...
  • Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching 
    Tomashyk, V.M.; Kravtsova, A.S.; Tomashyk, Z.F.; Stratiychuk, I.B.; Galkin, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been ...
  • Peculiarities of ZnSe dissolution in H₂O₂—HBr -ethylene glycol (oxalic acid) etchant compositions 
    Kravtsova, A.S.; Tomashyk, V.M.; Tomashyk, Z.F.; Stratiychuk, I.B.; Kuryk, A.O.; Kalytchuk, S.M.; Galkin, S.M. (Functional Materials, 2013)
    The process of chemical treatment of undoped and doped ZnSe crystals surfaces by bromine emerging solutions has been investigated. The depending of dissolution rate on the etchants composition, their mixing and temperature ...