Перегляд за автором "Starchyk, M.I."

Сортувати за: Порядок: Результатів:

  • Radiation-induced effects in silicon 
    Gaidar, G.P.; Pinkovska, M.B.; Starchyk, M.I. (Вопросы атомной науки и техники, 2019)
    Results of complex studies of the structural properties of silicon irradiated with light ions of megaelectronvolt energies by fluences greater than 10¹⁶ cm⁻² are presented. It was found that during irradiation under ...
  • Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions 
    Starchyk, M.I.; Marchenko, L.S.; Pinkovska, M.B.; Shmatko, G.G.; Varnina, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, ...