Перегляд за автором "Stadnyk, O.A."

Сортувати за: Порядок: Результатів:

  • Nesterenko, B.O.; Kazantseva, Z.I.; Stadnyk, O.A.; De Rossi, D.; Kalchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). ...
  • Bacherikov, Yu.Yu.; Golovina, I.S.; Kitsyuk, N.V.; Mukhlyo, M.A.; Rodionov, V.E.; Stadnyk, O.A. (Functional Materials, 2004)
    Influence of annealing modes on spectral characteristics of photoluminescence, elec -troluminescence, and electron spin resonance of ZnS:CuCI and ZnS:CuCI₂ powders has been studied. The thermal doping processes and structure ...
  • Bobrenko, Yu.N.; Pavelets, S.Yu.; Semikina, T.V.; Stadnyk, O.A.; Sheremetova, G.I.; Yaroshenko, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume ...