Перегляд за автором "Sipatov, A.Yu."

Сортувати за: Порядок: Результатів:

  • Dependence of electrical conductivity on Bi₂Se₃ thin film thickness 
    Menshikova, S.I.; Rogacheva, E.I.; Sipatov, A.Yu.; Fedorov, A.G. (Functional Materials, 2017)
    Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical ...
  • Interdiffusion in EuS -based epitaxial superlattice nanostructures 
    Fedorov, A.G.; Volobuev, V.V.; Samburskaya, T.V.; Sipatov, A.Yu. (Functional Materials, 2013)
    The diffusion intermixing of layers during annealing of EuS -based epitaxial superlattice nanostructures was studied by X-ray diffraction technique. The interdiffusion coefficients for EuS —PbS , EuS —PbSe , EuS —SrS ...
  • Investigation of the growth mechanism, structure, and thermoelectric properties of thin PbTe films grown on mica 
    Rogacheva, E.I.; Grigorov, S.N.; Lyubchenko, S.G.; Sipatov, A.Yu.; Volobuev, V.V.; Dresselhaus, M.S. (Functional Materials, 2005)
    The growth mechanisms, structure and thermoelectric properties of thin PbTe films prepared by thermal evaporation in vacuum and subsequent deposition on mica substrates at temperatures Ts = 375, 525 and 635 К were studied. ...
  • Misfit dislocation superlattices in IV-VI multilayered compounds as zero-dimensional quantum boxes 
    Sipatov, A.Yu. (Физика низких температур, 1999)
    Quantum dots can be generated by a new method based on the formation of misfit dislocations in a perfectly periodic array network during the epitaxial growth of IV-VI compound superlattices. Infrared photoluminescence ...
  • Size effects in thin n-PbTe films 
    Men'shikova, S.I.; Rogacheva, E.I.; Sipatov, A.Yu.; Zubarev, Ye.N. (Functional Materials, 2014-12-29)
    The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by ...
  • Structural investigations of superconducting multilayers consisting of semiconducting materials 
    Erenburg, A.I.; Fogel, N.Ya.; Bomze, Yu.V.; Sipatov, A.Yu.; Fedorenko, A.I.; Langer, V.; Norell, M. (Физика низких температур, 2001)
    There are rather exotic semiconducting superlattices (SL) consisting of monochalcogenides of Pb, Sn and rare-earth metals which exhibit superconductivity at temperature as high as 6 K. Here we report the results of precision ...
  • Structure of thermally evaporated bismuth selenide thin films 
    Rogacheva, E.I.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V.; Dobrotvorskay, M.V.; Garbuz, A.S.; Nashchekina, O.N.; Sipatov, A.Yu. (Functional Materials, 2018)
    The Bi₂Se₃ thin films with thicknesses d = 7-420 nm were grown by thermal evaporation in vacuum of stoichiometric n-Bi₂Se₃ crystals onto heated glass substrates under optimal technological conditions determined by the ...