Перегляд за автором "Shevchenko, V.I."

Сортувати за: Порядок: Результатів:

  • Atomic and electronic structure of a-SiC 
    Ivashchenko, V.I.; Shevchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Molecular dynamics (MD) simulations based on an empirical potential approach have provided detailed information about chemical ordering and the structural short-range order in stoichiometric amorphous silicon carbide ...
  • Effects of Lattice Relaxation and Limiting Shear Stress of fcc Metals at High-Rate Deformation 
    Kamyshenko, V.V.; Kartuzov, V.V.; Shevchenko, V.I.; Gooch, W.A. (Проблемы прочности, 2002)
    The results of calculations of the theoretical limiting shear stress for fcc metals Cu, Ni, Ag, Au, Pd, and Pt performed using “universal” empirical potentials of interatomic interactions of the embedded-atom type are ...
  • Phase transformation B1 to B2 in TiC, TiN, ZrC and ZrN under pressure 
    Ivashchenko, V.I.; Turchi, P.E.A.; Shevchenko, V.I. (Condensed Matter Physics, 2013)
    Phase stability of various phases of MX (M=Ti, Zr; X=C, N) at equilibrium and under pressure is examined based on first-principles calculations of the electronic and phonon structures. The results reveal that all B1 ...
  • Tight-binding description of TiCx 
    Ivashchenko, V.I.; Turchi, P.E.A.; Shevchenko, V.I.; Ivashchenko, L.A.; Porada, O.K. (Condensed Matter Physics, 2004)
    A parametrized non-orthogonal tight-binding (TB) method combined with the coherent-potential-approximation is applied to the study of the electronic structure of disordered off-stoichiometric TiCx, the lattice relaxation ...