Перегляд за автором "Serdega, B.K."

Сортувати за: Порядок: Результатів:

  • Effect of surface condition on strain in semiconductor crystal sample 
    Serdega, B.K.; Nikitenko, E.V.; Prikhodenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample ...
  • Investigation of the photoelastic effect in si at high values of the absorptivity 
    Boiko, I.I.; Venger, Ye.F.; Nikitenko, E.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band ...
  • New features of surface plasmon resonance detected by modulation of electromagnetic radiation polarization 
    Berezhinsky, L.J.; Matyash, I.E.; Rudenko, S.P.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Using a technique based on modulation of electromagnetic radiation polarization, we studied the features of surface plasmon resonance in gold nanofilms deposited onto the surface of a totally reflecting prism (fused ...
  • Polarization analysis of birefringence in uniaxially deformed silicon crystals 
    Berezhinsky, L.I.; Berezhinsky, I.L.; Pipa, V.I.; Matyash, I.Ye.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance ...
  • Some features of polarization modulation in spectroscopy of optical and photoelectric effects 
    Kondratenko, S.V.; Matyash, I.A.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We analyze usage of modulation of electromagnetic radiation polarization in investigations of optical and photoelectric effects in anisotropic crystals. It is shown that when transmission spectra are studied with the ...
  • Spectral dependence of the photomagnetic effect in porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate ...
  • Spectra of the photo-electric phenomena physically differentiated on the light absorption factor 
    Berezhinsky, L.I.; Venger, E.F.; Matyash, I.E.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties ...
  • The features of phonon component of linear dichroism in uniaxially strained silicon crystals 
    Serdega, B.K.; Venger, E.F.; Matyash, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral ...
  • The features of surface plasmon resonance in gold cluster films 
    Maksimenko, L.S.; Matyash, I.E.; Rudenko, S.P.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The internal reflection of nanosized gold cluster films was studied using the technique of polarization modulation of electromagnetic radiation in the Kretschmann geometry. We measured the reflection coefficients Rs and ...
  • Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique 
    Serdega, B.K.; Venger, Ye.F.; Nikitenko, Ye.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The ...