Torchinskaya, T.V.; Korsunskaya, N.E.; Khomenkova, L.Yu.; Dzhumaev, B.R.; Many, A.; Goldstein, Y.; Savir, E.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
Photoluminescence (PL), photoluminescence excitation (PLE) and FTIR methods were used to study the PL excitation mechanism in porous silicon (PS). Two types of PLE spectra were observed, consisting of two (visible and ...