Перегляд за автором "Sai, P.O."

Сортувати за: Порядок: Результатів:

  • Current transport through ohmic contacts to indiume nitride with high defect density 
    Sai, P.O.; Safriuk, N.V.; Shynkarenko, V.V.; Brunkov, P.N.; Jmerik, V.N.; Ivanov, S.V. (Functional Materials, 2018)
    The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward indium nitride (with different doping level 2.0ċ10¹⁸ and 8.3ċ10¹⁸ cm⁻³) over the wide temperature range (4.2 - 380 K). The ...
  • Degradation processes in LED modules 
    Sorokin, V.M.; Kudryk, Ya.Ya.; Shynkarenko, V.V.; Kudryk, R.Ya.; Sai, P.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip ...
  • Ohmic contacts to InN-based materials 
    Sai, P.O. (Технология и конструирование в электронной аппаратуре, 2016)
    The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact ...