Перегляд за автором "Sadofyev, Yu.G."

Сортувати за: Порядок: Результатів:

  • Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence 
    Valakh, M.Ya.; Sadofyev, Yu.G.; Korsunska, N.O.; Semenova, G.N.; Strelchuk, V.V.; Borkovska, L.V.; Vuychik, M.V.; Sharibaev, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different ...
  • Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers 
    Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...
  • Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures 
    Borkovska, L.V.; Korsunska, N.O.; Kushnirenko, V.I.; Sadofyev, Yu.G.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. ...