Перегляд за автором "Rusavsky, A.V."

Сортувати за: Порядок: Результатів:

  • Tiagulskyi, S.I.; Nazarov, A.N.; Gordienk, S.O.; Vasin, A.V.; Rusavsky, A.V.; Nazarova, T.M.; Gomeniuk, Yu.V.; Rudko, G.V.; Lysenko, V.S.; Rebohle, L.; Voelskow, M.; Skorupa, W.; Koshka, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron ...
  • Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • Vishnevsky, I.N.; Totsky, Yu.I.; Mozhzhukin, E.N.; Katsubo, L.P.; Rusavsky, A.V.; Garashchenko, F.G.; Kharchenko, I.I. (Вопросы атомной науки и техники, 1999)
  • Vasin, A.V.; Ishikawa, Y.; Rusavsky, A.V.; Nazarov, A.N.; Konchitz, A.A.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Near-stochiometric and carbon-rich a-Si₁₋xCx:H thin films were deposited using the magnetron sputtering of Si target in Ar/CH₄ gas mixture. As-deposited nearstochimetric (x = 0.5) sample showed weak blue photoluminescence ...
  • Vasin, A.V.; Matveeva, L.A.; Kozeratskaya, G.N.; Rusavsky, A.V.; Totsky, Yu.I.; Vishnevsky, I.N. (Вопросы атомной науки и техники, 2001)
    The problem of the radiation resistance of the carbon stripper foils is considered. The short review of the experimental data available in literature and original experimental results of the authors are presented. In the ...