Перегляд за автором "Rudenko, O.V."

Сортувати за: Порядок: Результатів:

  • Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them 
    Boltovets, N.S.; Voitsikhovskyi, D.I.; Konakova, R.V.; Milenin, V.V.; Makara, V.A.; Rudenko, O.V.; Mel’nichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface ...
  • Evidence for photochemical transformations in porous silicon 
    Shevchenko, V.B.; Makara, V.A.; Vakulenko, O.V.; Dacenko, O.I.; Rudenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase ...
  • Relation between structure inhomogeneities and relaxation processes in excited silicon crystals 
    Makara, V.A.; Kolomiets, A.M.; Kolchenko, Yu.L.; Naumenko, S.M.; Rudenko, O.V.; Steblenko, L.P. (Functional Materials, 2004)
    The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed ...