Перегляд за автором "Pinkovska, M.B."

Сортувати за: Порядок: Результатів:

  • Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Olikh, Ya.M.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence ...
  • Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P.; Shlapatska, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage ...
  • Influence of structural defects on photoconductivity of zinc diphosphide 
    Kudin, A.P.; Kuts, V.I.; Litovchenko, P.G.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects ...
  • Low doses effect in GaP light-emitting diodes 
    Hontaruk, O.M.; Konoreva, O.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Radkevych, O.I.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of ...
  • Radiation-induced effects in silicon 
    Gaidar, G.P.; Pinkovska, M.B.; Starchyk, M.I. (Вопросы атомной науки и техники, 2019)
    Results of complex studies of the structural properties of silicon irradiated with light ions of megaelectronvolt energies by fluences greater than 10¹⁶ cm⁻² are presented. It was found that during irradiation under ...
  • Semiconductor sensors for dosimetry of epithermal neutrons 
    Litovchenko, P.G.; Moss, R.; Stecher-Rasmussen, F.; Appelman, K.; Barabash, L.I.; Kibkalo, T.I.; Lastovetsky, V.F.; Litovchenko, A.P.; Pinkovska, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...
  • Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions 
    Starchyk, M.I.; Marchenko, L.S.; Pinkovska, M.B.; Shmatko, G.G.; Varnina, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, ...