Перегляд за автором "Palewski, T."

Сортувати за: Порядок: Результатів:

  • Piezoresistive properties of boron-doped silicon whiskers at cryogenic temperatures 
    Druzhinin, A.A.; Maryamova, I.I.; Pavlovskyy, I.V.; Palewski, T. (Functional Materials, 2004)
    Piezoresistive properties of boron-doped p-type silicon whiskers in temperature range of 1.7 to 300 K were studied. The giant piezoresistance was observed in p-Si whiskers in the vicinity of metal-insulator transition at ...
  • Strain induced effects in p-type silicon whiskers at low temperatures 
    Druzhinin, A.A.; Maryamova, I.I.; Kutrakov, O.P.; Liakh-Kaguy, N.S.; Palewski, T. (Functional Materials, 2012)
    Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron ...