Перегляд за автором "Oleksenko, P."

Сортувати за: Порядок: Результатів:

  • Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Elements of technology to produce liquid crystal (LC) light shutters for a welding automatic mask with the built-in transparent heater for operating LC layer were developed. Experimental samples of light shutters were ...
  • Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate ...
  • Kolomzarov, Yu.; Oleksenko, P.; Rybalochka, A.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Influence of ionic and plasma treatment on orienting properties of indium-tinoxide (ITO) films was investigated. The stable tilt angle generation of nematic liquid crystal (NLC) molecules was attended. Dependences of NLC ...
  • Oleksenko, P.; Sorokin, V.; Zelinskyy, R.; Tytarenko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The construction of acousto-optical display based on the hysteretic in cholesteric liquid crystals (CLCs) is proposed for nondestructive holographic test systems. The influence oblique reactive sputtering deposited thin ...
  • Oleksenko, P.; Sorokin, V.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Using the light modulator based on electrically controlled reflection in the interface between isotropic dielectric and nematic liquid crystal has been viewed. The optical scheme of a laser projection microscope (LPM) with ...
  • Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are ...
  • Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A mechanism for creation of microrelief surface anisotropy of amorphous films oxides materials which are obtained by oblique reactive cathode sputtering method is described. The influence of technological parameters of ...