Перегляд за автором "Neverov, V.N."

Сортувати за: Порядок: Результатів:

  • Activation transport under quantum Hall regime in HgTe-based heterostructure 
    Gudina, S.V.; Neverov, V.N.; Novik, E.G.; Ilchenko, E.V.; Harus, G.I.; Shelushinina, N.G.; Podgornykh, S.M.; Yakunin, M.V.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2017)
    We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation ...
  • Anomalous behavior of the Hall effect in electron-doped superconductor Nd₂₋xCexCuO₄₊δ with nonstoichiometric disorder 
    Charikova, T.B.; Shelushinina, N.G.; Harus, G.I.; Neverov, V.N.; Petukhov, D.S.; Sochinskaya, O.E.; Ivanov, A.A. (Физика низких температур, 2011)
    Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B║c, J║ab) in electrondoped Nd₂₋xCexCuO₄₊δ single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a ...
  • Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary 
    Charikova, T.B.; Shelushinina, N.G.; Harus, G.I.; Neverov, V.N.; Petukhov, D.S.; Petukhova, O.E.; Ivanov, A.A. (Физика низких температур, 2015)
    We present the investigation results of the in-plane ρ(T) resistivity tensor at the temperature range 0.4–40 K in magnetic fields up to 90 kOe (H || c, J || ab) for electron-doped Nd₂₋xCexCuO₄+δ with different degree of ...
  • HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential 
    Gudina, S.V.; Arapov, Y.G.; Neverov, V.N.; Podgornykh, S.M.; Popov, M.R.; Deriushkina, E.V.; Shelushinina, N.G.; Yakunin, M.V.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2019)
    We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2.9–50 K. The ...
  • Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility 
    Arapov, Yu.G.; Harus, G.I.; Karskanov, I.V.; Neverov, V.N.; Shelushinina, N.G.; Yakunin, M.V. (Физика низких температур, 2007)
    The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1 has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is carried out for both the low- and ...
  • Scaling laws under quantum Hall effect for a smooth disorder potential 
    Gudina, S.V.; Klepikova, A.S.; Neverov, V.N.; Shelushinina, N.G.; Yakunin, M.V. (Физика низких температур, 2019)
    We carried out the analysis of discovered experimental values of the critical parameter κ for the quantum Hall plateau-plateau transitions in modulation-doped GaAs/AlGaAs heterostructures. It turned out that these values are ...