Melezhik, E.O.; Gumenjuk-Sichevsk, J.V.; Sizov, F.F.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
Modeled in this work is the electron mobility in the n-type Hg⁰.³²Cd⁰.⁶⁸Te/Hg₁₋xCdxTe/Hg⁰.³²Cd⁰.⁶⁸Te quantum well being in the semi-metal state at T = 77 K. Calculations take into account longitudinal polar optical phonon ...