Перегляд за автором "Markevich, I.V."

Сортувати за: Порядок: Результатів:

  • About self-activated orange emission in ZnO 
    Markevich, I.V.; Stara, T.R.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL ...
  • About self-activated orange emission in ZnO 
    Markevich, I.V.; Stara, T.R.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL ...
  • About the nature of diffusion anisotropy in CdS crystals 
    Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics 
    Markevich, I.V.; Stara, T.R.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and ...
  • Metastable interstitials in CdSe and CdS crystals 
    Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Korsunska, N.O.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The ...
  • Photo-enchanced defect reactions in CdS:Ag crystals 
    Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Two reversible photo-enhanced defect reactions proceeding under visible light illumination have been found in CdS:Ag crystals. The first process leads to the increase of crystal photosensitivity, which has been shown to ...
  • Silver-related local centres in cadmium sulfide 
    Borkovskaya, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular ...
  • The change in optical characteristics of ZnO crystals under ruby laser irradiation 
    Markevich, I.V.; Kushnirenko, V.I.; Baidullaeva, A.; Bulakh, B.M.; Pobirovskiy, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The ...