Перегляд за автором "Manoilov, E.G."

Сортувати за: Порядок: Результатів:

  • A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures 
    Sachenko, A.V.; Kryuchenko, Yu.V.; Manoilov, E.G.; Kaganovich, E.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, ...
  • Charge characteristics of the MOS structures with oxide films containing Si nanocrystals 
    Begun, E.V.; Bratus’, O.L.; Evtukh, A.A.; Kaganovich, E.B.; Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage ...
  • Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate 
    Kaganovich, E.B.; Kizyak, I.M.; Kirillova, S.I.; Konakova, R.V.; Lytvyn, O.S.; Lytvyn, P.M.; Manoilov, E.G.; Primachenko, V.E.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology ...
  • Field emission of electrons from laser produced silicon tip arrays 
    Evtukh, A.A.; Kaganovich, E.B.; Litovchenko, V.G.; Litvin, Yu.M.; Fedin, D.V.; Manoilov, E.G.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The new preparation method of silicon tips with nanocomposite structure, namely laser modification of silicon is developed. The laser direct-write process has been applied, one by one (single) laser pulses formed the single ...
  • Interface electronic properties of eterojunctions based on nanocrystalline silicon 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples ...
  • Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition 
    Strelchuk, V.V.; Kolomys, O.F.; Golichenko, B.O.; Boyko, M.I.; Kaganovich, E.B.; Krishchenko, I.M.; Kravchenko, S.O.; Lytvyn, O.S.; Manoilov, E.G.; Nasieka, Iu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nanocomposite porous films with silver nanoparticle (Ag NP) arrays were prepared by the pulsed laser deposition from the back flux of erosion torch particles in argon atmosphere on the substrate placed at the target plane. ...
  • Optical and photoluminescent properties of Ag/Al₂O₃ nanocomposite films obtained by pulsed laser deposition 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The method of pulsed laser deposition in vacuum from forward and backward particle flows from an erosion torch was used to prepare silver films and Ag/Al₂O₃ nanocomposite films. Measured were transmission and time-resolved ...
  • Photoluminescent films of nanocrystalline silicon doped with metals 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V.; Venger, E.F.; Bazylyuk, I.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ...
  • Photoluminescent properties of Al₂O₃ films containing gold nanoparticles, which are prepared by pulse laser deposition 
    Kaganovich, E.B.; Kizyak, I.M.; Kudryavtsev, A.A.; Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Photoluminescent porous films of aluminum oxide containing gold nanoparticles were prepared using pulse laser deposition from backward flow of particles from erosion torch. Measurements of time-resolved photoluminescence ...
  • Photosensitive porous silicon based structures 
    Svechnikov, S.V.; Kaganovich, E.B.; Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    We present results of electrical and photoelectrical measurements on two types of Al/porous silicon (PS)/monocrystalline silicon (c-Si)/Al sandwich structures with thin and thick PS layers obtained by stain etching. ...
  • Regularities of visible photoluminescence creation in low-dimensional silicon structures 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...