Перегляд за автором "Litovchenko, P."

Сортувати за: Порядок: Результатів:

  • Peculiarities of neutron irradiation influence on GaP light-emitting structures 
    Litovchenko, P.; Litovchenko, A.; Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) ...
  • Peculiarities of optical absorption near-edge in irradiated GaP:Te 
    Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Tartachnyk, V. (Functional Materials, 2010)
  • Radiation influence on characteristics of GaP light emitting diodes 
    Borzakovskyj, A.; Gontaruk, O.; Kochkin, V.; Litovchenko, P.; Opilat, V.; Petrenko, I.; Tartachnyk, V. (Functional Materials, 2009)
    The capacitance properties of GaP green and red LEDs have been studied. It was found the character of a doping impurity distribution in the depleted region and the junction depth dependence on bias voltage and impurity ...
  • Radiative recombination in initial and electron-irradiated GaP crystals 
    Hontaruk, O.; Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the ...