Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
In this work, we studied comparative characteristics of the SiO₂/SiC
heterostructures. The following two techniques were used for SiO₂ formation: thermal
oxidation in water vapor (i) and oxidation in solution (ii). ...