Перегляд за автором "Kulish, N.R."

Сортувати за: Порядок: Результатів:

  • Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment 
    Kunets, V.P.; Kulish, N.R.; Strelchuk, V.V.; Nazarov, A.N.; Tkachenko, A.S.; Lysenko, V.S.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the ...
  • Influence of polarization azimuth on twophoton absorption in CdS 
    Kulish, N.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    To study the dependence of the two-photon absorption coefficient β on a polarization azimuth ϕ we used the method of one light source at the ruby laser frequency. It was shown that β changes smoothly with increasing ϕ ...
  • Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots 
    Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • Radiation-resistant ultraviolet curable polyurethane films with CdSe-ZnS сore-shell nanocrystals 
    Kulish, N.R.; Kunets, V.P.; Narsingi, K.Y.; Manasreh, M.O.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of proton fluence of different doses (up to 9×10¹⁵ protons/cm² ) on the absorption spectra of UV-cured polyurethane films doped by CdSe/ZnS nanocrystals has been investigated. We found that the degradation of ...
  • Self-consistent method for optimization of parameters of diode temperature sensors 
    Kulish, N.R.; Shwarts, Yu.M.; Borblik, V.L.; Venger, Ye.F.; Sokolov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically ...
  • Urbach’s rule peculiarities in structures with CdSxSe₁₋x nanocrystals 
    Kunets, V.P.; Kulish, N.R.; Kunets, Vas.P.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We have found that the long wavelength fundamental absorption edge of CdSXSe₁-x nanocrystals grown in an oxide glass follows to the generalized Urbach rule that takes into account both the dynamic (phonon induced) and ...