Перегляд за автором "Korotash, I.V."

Сортувати за: Порядок: Результатів:

  • Rudenko, E.M.; Korotash, I.V.; Polotskiy, D.Y.; Osipov, L.S.; Dyakin, M.V.; Prikhna, T.A.; Shapovalov, A.P. (Металлофизика и новейшие технологии, 2015)
    The features of the physical mechanisms of controlled ion-plasma formation of the new functional nanomaterials are investigated. The technological regimes of formation of functional nanostructured materials under combined ...
  • Rudenko, E.M.; Panarin, V.Ye.; Kyrychok, P.O.; Svavilnyi, M.Ye.; Korotash, I.V.; Palyukh, O.O.; Polotskyi, D.Yu.; Trishchuk, R.L. (Успехи физики металлов, 2019)
    The main types of state-of-the-art nitriding technologies, their advantages and disadvantages are considered. An innovative technology of ion nitriding in high-frequency helicon-discharge plasma is proposed. The hardening ...
  • Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybri, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybrii, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Semenyuk, V.F.; Virko, V.F.; Korotash, I.V.; Osipov, L.S.; Polotsky, D.Yu.; Rudenko, E.M.; Slobodyan, V.M.; Shamrai, K.P. (Вопросы атомной науки и техники, 2013)
    In experiments on two helicon sources driven by a planar antenna, it is shown that the plasma density in the drift chamber and the energies and density of the ion flux onto the substrate holder can be effectively controlled ...