Перегляд за автором "Kirillova, S.I."

Результати 1-9 з 9

Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition

Primachenko, V.E.; Fedorenko, L.L.; Tsyrkunov, Yu.A.; Zinio, S.A.; Kirillova, S.I.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

Current creation caused by water decomposition Н₂О → ОН+Н has been investigated for the case of an Yb-Si electrode pair after the preliminary covering of Si electrodes with transition metal (Ni, Ti, Cr) films, as well ...
Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate

Kaganovich, E.B.; Kizyak, I.M.; Kirillova, S.I.; Konakova, R.V.; Lytvyn, O.S.; Lytvyn, P.M.; Manoilov, E.G.; Primachenko, V.E.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology ...
Electronic properties of silicon surface at different oxide film conditions

Kirillova, S.I.; Primachenko, V.E.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films ...
Electron states at the Si–SiO₂ boundary (Review)

Primachenko, V.E.; Kirillova, S.I.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO₂ structures prepared mainly using thermal oxidation ...
Interface electronic properties of eterojunctions based on nanocrystalline silicon

Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples ...
Photoluminescent films of nanocrystalline silicon doped with metals

Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V.; Venger, E.F.; Bazylyuk, I.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ...
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

Primachenko, V.E.; Kirillova, S.I.; Chernobay, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

This overview deals with original works of authors as well as with works by native and foreign authors, which are devoted to this or close topics. It is written with account of the modern state of the problem, to solve ...
Study of diamond-like carbon films doped with transition metals and used as cathodes for current creation in water

Primachenko, V.E.; Lukjanov, A.N.; Kirillova, S.I.; Chernobay, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Properties of diamond-like carbon films (DLCF) on n-Si substrates used as cathodes in Yb – DLCF (n-Si) water electrochemical system have been studied by current creation with water decomposition H2O → OH⁻ + H⁺ . The ...
Zn and Mn impurity effect on electron and luminescent properties of porous silicon

Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...

Результати 1-9 з 9

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Перегляд за автором "Kirillova, S.I."

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