Перегляд за автором "Kavetskyy, T.S."

Результати 1-6 з 6

Long-term radiation-induced optical darkening effects in chalcogenide glasses

Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical ...
Low-temperature positron annihilation study of B⁺-ion implanted PMMA

Kavetskyy, T.S.; Tsmots, V.M.; Voloshanska, S.Ya.; Šauša, O.; Nuzhdin, V.I.; Valeev, V.F.; Osin, Y.N.; Stepanov, A.L. (Физика низких температур, 2014)

Temperature dependent positron annihilation lifetime spectroscopy (PALS) measurements in the range of 50–300 K are carried out to study positronium formation in 40 keV B+-ion implanted polymethylmethacrylate (B:PMMA) with ...
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses

Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, ...
Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements

Kavetskyy, T.S.; Tsmots, V.M.; Stepanov, A.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction ...
Radiation-induced optical darkening and oxidation effects in As₂S₃ glass

Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)

The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average ...
Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements

Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, ...

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Перегляд за автором "Kavetskyy, T.S."

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