Перегляд за автором "Katerynchuk, V.M."

Сортувати за: Порядок: Результатів:

  • Excitonic photoconductivity of heterostructures based on gallium and indium selenides 
    Katerynchuk, V.M.; Kovalyuk, Z.D.; Tkachuk, I.G. (Functional Materials, 2017)
    Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic ...
  • Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis 
    Kushnir, B.V.; Kovalyuk, Z.D.; Katerynchuk, V.M.; Netyaga, V.V.; Tkachuk, I.G. (Functional Materials, 2017)
    A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature ...
  • Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide 
    Katerynchuk, V.M.; Kudrynskyi, Z.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal layer has a nanostructured surface, have been investigated. The photoresponse spectra of these heterostructures have been found as essentially ...
  • Photoemission spectra of indium selenide 
    Katerynchuk, V.M.; Kovalyuk, M.Z.; Tovarnitskii, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation ...
  • Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals 
    Katerynchuk, V.M.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor ...