Перегляд за автором "Gorban, A.P."

Сортувати за: Порядок: Результатів:

  • Conversion efficiency in silicon solar cells with spatially non-uniform doping 
    Sachenko, A.V.; Prima, N.A.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown ...
  • Effect of emitter proprties on the conversion efficiency of silicon solar cells 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into ...
  • Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon 
    Gorban, A.P.; Sachenko, A.V.; Kostylyov, V.P.; Prima, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and ...
  • Efficiency limit for diffusion silicon solar cells at concentrated illumination 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V.; Serba, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive ...
  • Exciton effects in band-edge electroluminescence of silicon barrier structures 
    Sachenko, A.V.; Gorban, A.P.; Korbutyak, D.V.; Kostylyov, V.P.; Kryuchenko, Yu.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen ...
  • Exciton-enhanced recombination in silicon at high concentrations of charge carriers 
    Sachenko, A.V.; Gorban, A.P.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation ...
  • On the collection of photocurrent in solar cells with a contact grid 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • The study of solar cells with back side contacts at low illumination 
    Gorban, A.P.; Kostylyov, V.P.; Litovchenko, V.G.; Sachenko, A.V.; Serba, A.A.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of ...