Перегляд за автором "Gomeniuk, Yu.V."

Сортувати за: Порядок: Результатів:

  • Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements 
    Gomeniuk, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements ...
  • Electroluminescent properties of Tb-doped carbon-enriched silicon oxide 
    Tiagulskyi, S.I.; Nazarov, A.N.; Gordienk, S.O.; Vasin, A.V.; Rusavsky, A.V.; Nazarova, T.M.; Gomeniuk, Yu.V.; Rudko, G.V.; Lysenko, V.S.; Rebohle, L.; Voelskow, M.; Skorupa, W.; Koshka, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron ...