Перегляд за автором "Gomeniuk, Y.V."

Сортувати за: Порядок: Результатів:

  • Current transport mechanisms in metal – high-k dielectric – silicon structures 
    Gomeniuk, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The mechanism of current transport in several high k -dielectric, including rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth metal silicate (LaSiOx) thin films on silicon was studied ...
  • Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the ...
  • Effect of the charge state of traps on the transport current in the SiC/Si heterostructure 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described ...
  • Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric 
    Nazarov, A.N.; Gomeniuk, Y.V.; Gomeniuk, Y.Y.; Lysenko, V.S.; Gottlob, H.D.B.; Schmidt, M.; Lemme, M.C.; Czernohorsky, M.; Ostenc, H.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. ...
  • Properties of SiGe/Si heterostructures fabricated by ion implantation technique 
    Gomeniuk, Y.V.; Lysenko, V.S.; Osiyuk, I.N.; Tyagulski, I.P.; Valakh, M.Ya.; Yukhimchuk, V.A.; Willander, M.; Patel, C.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate ...