Tunnel conductance G(V)for break-junctions made of as-grown single-crystal Bi₂Sr₂CaCu₂O₈₊δ samples with Tc≈86-89 K was measured and clear-cut dip-hump structures (DHSs) were found in the range 80-120mV of the bias voltage ...

The problem of coexistence between charge-density-waves (CDWs) and superconductivity is revisited. Recent evidence was analyzed for different classes of materials with the emphasis on high-Tc oxides. For the latter, the ...

Interaction energy between two point charges, WQQ′ , or two point dipoles, WPP′ , located in a medium with a constant dielectric permittivity near the plane surface of a metallic or semiconducting substrate with the spatial ...

The bias-voltage, V, dependences of the differential tunnel conductance G(V) = dJ/DV were calculated for the quasiparticle current J flowing in the ab plane across the break junction made of d-wave superconductors. The ...

The limiting field Hp for spin-singlet superconductors with charge-density waves (CDWs), which paramagnetically destroys the ordered phase, possessing coexisting superconducting and CDW order parameters, is calculated ...

The iron-chalcogenide superconductor FeSe₁–xTex (0.5 < x < 1) was investigated by scanning-tunneling microscopy/ spectroscopy (STM/STS) and break-junction techniques. In the STM topography of the samples, randomly distributed ...

Dependences of the stationary Josephson current in symmetric and nonsymmetric tunnel junctions involving d-wave superconductors with charge density waves (CDWs) on the system parameters are calculated. Both the checkerboard ...

The electronic gap structure of Nb3Sn was measured by the break-junction (BJ) tunneling technique. The superconducting gap values are estimated to be in the range 2∆ = 4–5.5 meV at T = 4.2 K as follows from the ...