Перегляд за автором "Freik, D.M."

Сортувати за: Порядок: Результатів:

  • Freik, D.M.; Boychuk, V.I.; Mezhylovsjka, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain ...
  • Freik, D.M.; Ruvinskii, M.A.; Ruvinskii, B.M.; Galushchak, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects ...
  • Freik, D.M.; Pysklynets, U.M.; Mezhylovska, L.Y. (Functional Materials, 2007)
    Quasi-chemical equations have been proposed for the formation of point defects (PD) and complexes thereof in germanium-doped cadmium telluride single crystals. Baric and temperature dependences of dominant PD and free ...
  • Freik, D.M.; Nykyruy, L.I.; Shperun, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ...
  • Freik, D.M.; Yurchyshyn, I.K.; Potyak, V.Yu.; Lysiuk, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The thickness dependences of the thermoelectric parameters were observed at room temperature for nanostructures p-PbTe, grown from the vapor phase on polyamide film substrates. An attempt to explain detected dependences ...
  • Freik, D.M.; Galushchak, M.O.; Ivanishin, I.M.; Shperun, V.M.; Zapukhlyak, R.I.; Pyts, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism ...
  • Freik, D.M.; Zapukhlyak, R.I.; Lopjanka, M.A.; Mateik, G.D.; Mikhajlonka, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The equations of a regression were obtained by methods of mathematical planning of manyfactors experiments. These equations determine a dependence of thermoelectric parameters of PbTe thin films prepared by hot wall the ...