Перегляд за автором "Fomin, A.V."

Результати 1-3 з 3

Balance model for contactless chemo-mechanical polishing of wafers

Grigoriev, N.N.; Kravetsky, M.Yu.; Paschenko, G.A.; Sypko, S.A.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, ...
Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials

Kravetsky, M.Yu.; Sypko, S.A.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

On the basis of the balance model for convection-diffusion processes that occur during string chemical cutting (CC) of samples, we derive an analytical expression for the limiting CC rate at maximal use of etching agent. ...
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing

Pashchenko, G.A.; Kravetskyi, M.Yu.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical ...

Результати 1-3 з 3

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