Перегляд за автором "Fochuk, P.M."

Результати 1-3 з 3

Si as dopant impurity in CdTe

Fochuk, P.M.; Panchuk, O.E. (Functional Materials, 2005)

CdTe<Si> single crystals have been investigated by high-temperature Hall effect meas- urements under Cd vapor pressure in 200-900 ℃ temperature range. Basing on the experimental results, the Si solubility in CdTe at 500-600 ...
Structural and microstructural properties of Cd₁-xZnxTe films deposited by close spaced vacuum sublimation

Znamenshchykov, Y.V.; Kosyak, V.V.; Opanasyuk, A.S.; Kolesnyk, M.M.; Grinenko, V.V.; Fochuk, P.M. (Functional Materials, 2016)

The structural properties (microstresses, texture, lattice parameter, coherent scattering domains size) and chemical composition of Cd₁₋xZnxTe (CZT) films with variable zinc concentration were studied. Films were deposited ...
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

Prokopiv, V.V.; Fochuk, P.M.; Gorichok, I.V.; Vergak, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe ...

Результати 1-3 з 3

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