Перегляд за автором "Dveriy, O.R."

Сортувати за: Порядок: Результатів:

  • Galiy, P.V.; Ciszewski, A.; Dveriy, O.R.; Losovyj, Ya.B.; Mazur, P.; Nenchuk, T.M.; Zuber, S.; Fiyala, Ya.M. (Functional Materials, 2009)
    The crystallography and topography of the (100) cleavage surfaces of layered semiconductor In₄Se₃ crystal have been studied by low energy electron diffraction (LEED), scanning tunnelling and atomic-force microscopy (STM, ...
  • Galiy, P.V.; Mazur, P.; Ciszewski, A.; Nenchuk, T.M.; Yarovets’, I.R.; Dveriy, O.R. (Металлофизика и новейшие технологии, 2018)
    Self-assembled indium deposition-induced nanostructures are obtained on the UHV cleaved (100) surface of In₄Se₃ layered semiconductor crystals. The small indium-deposition rates and short deposition times are chosen to ...
  • Galiy, P.V.; Nenchuk, T.M.; Ciszewski, A.; Mazur, P.; Yarovets’, I.R.; Dveriy, O.R. (Металлофизика и новейшие технологии, 2017)
    Scanning tunnelling microscopy/spectroscopy (STM/STS) data show that InSe layered crystal intercalated with nickel is a heteronanosystem—InSe layer-packet that alternates with nickel at fine dispersed phase in the interlayer ...