Перегляд за автором "Druzhinin, A.A."

Сортувати за: Порядок: Результатів:

  • Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays 
    Druzhinin, A.A.; Yerokhov, V.Y.; Nichkalo, S.I.; Ostapiv, O.Y. (Functional Materials, 2018)
    In this paper experimental results on study of optical properties of Si wafers with surface textures in form of Si random pyramids, Si nanowire arrays, and pyramidal Si combined with Si nanowire arrays are presented. It ...
  • GaSb whiskers in sensor electronics 
    Druzhinin, A.A.; Maryamova, I.I.; Kutrakov, O.P. (Functional Materials, 2016)
    Piezoresistive properties of gallium antimonide whiskers grown from the vapour phase by chemical transport reaction were studied in the temperature range of -150÷+100°C. The possibility to create different piezoresistive ...
  • Low temperature characteristics of germanium whiskers 
    Druzhinin, A.A.; Ostrovskii, I.P.; Khoverko, Yu.N.; Liakh-Kaguy, N.S.; Vuytsyk, A.M. (Functional Materials, 2014)
    Magnetophonone oscillations of magnetoresistance in heavily doped n-Ge whiskers with impurity concentration that corresponds to metal-insulator transition were studied in the temperatures range 4.2-70 K in continuous and ...
  • Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers 
    Druzhinin, A.A.; Ostrovskii, I.P.; Kogut, Yu.R.; Warchulska, J.K. (Functional Materials, 2007)
    The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two ...
  • Peculiarities of charge carriers transport in submicron Si-Ge whiskers 
    Druzhinin, A.A.; Dolgolenko, A.P.; Ostrovskii, I.P.; Khoverko, Yu.N.; Nichkalo, S.I.; Kogut, Iu.R. (Functional Materials, 2014)
    The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy ...
  • Peculiarities of Si-Ge whisker growing by CTR method 
    Druzhinin, A.A.; Ostrovskii, I.P.; Khoverko, Yu.M.; Gij, Ya.V. (Functional Materials, 2005)
    Growth peculiarities of doped Si₁₋ₓGeₓ (х = 0.01-0.05) solid solution whiskers of 1 to 100 µm in diameter in closed bromide system by chemical transport reactions method have been investigated. А dimensional dependence ...
  • Piezoresistive properties of boron-doped silicon whiskers at cryogenic temperatures 
    Druzhinin, A.A.; Maryamova, I.I.; Pavlovskyy, I.V.; Palewski, T. (Functional Materials, 2004)
    Piezoresistive properties of boron-doped p-type silicon whiskers in temperature range of 1.7 to 300 K were studied. The giant piezoresistance was observed in p-Si whiskers in the vicinity of metal-insulator transition at ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction 
    Druzhinin, A.A.; Khoverko, Yu.М.; Kutrakov, A.P.; Liakh-Kaguy, N.S.; Yatsukhnenko, S.Yu. (Технология и конструирование в электронной аппаратуре, 2017)
    Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction has been developed based on the studies of electrical conductivity and magnetoresistance of silicon and germanium ...
  • Strain induced effects in p-type silicon whiskers at low temperatures 
    Druzhinin, A.A.; Maryamova, I.I.; Kutrakov, O.P.; Liakh-Kaguy, N.S.; Palewski, T. (Functional Materials, 2012)
    Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron ...