Перегляд за автором "Lytvyn, O.S."

Сортувати за: Порядок: Результатів:

  • Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy 
    Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
  • Structural investigations of annealed ZnS:Cu, Ga film phosphors 
    Lytvyn, O.S.; Khomchenko, V.S.; Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Prokopenko, I.V.; Rodionov, V.Ye.; Tzyrkunov, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various ...
  • Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing 
    Bratus, O.L.; Evtukh, A.A.; Lytvyn, O.S.; Voitovych, M.V.; Yukhymchuk, V.О. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The nanocomposite SiO₂(Si) films containing Si nanoclusters inside insulating SiO₂matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O₂ containing gas mixture and following thermal ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment 
    Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Lytvyn, O.S.; Prokopenko, I.V.; Ivanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal ...
  • Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing 
    Steblova, O.V.; Evtukh, A.A.; Bratus’, O.I.; Fedorenko, L.L.; Voitovych, M.V.; Lytvyn, O.S.; Gavrylyuk, O.O.; Semchuk, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx ...
  • Ultrasonic assisted nanomanipulations with atomic force microscope 
    Lytvyn, P.M.; Olikh, O.Ya.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions ...