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The silica and silicon luminescence induced by fast hydrogen ions

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dc.contributor.author Kalantaryan, O.V.
dc.contributor.author Kononenko, S.I.
dc.contributor.author Muratov, V.I.
dc.date.accessioned 2015-05-19T08:46:51Z
dc.date.available 2015-05-19T08:46:51Z
dc.date.issued 2000
dc.identifier.citation The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. uk_UA
dc.identifier.issn 1562-6016
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/81676
dc.description.abstract The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed. uk_UA
dc.description.sponsorship The autors are grateful to the Member of National Academy of Science of Ukraine V.Storighko for help. uk_UA
dc.language.iso en uk_UA
dc.publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України uk_UA
dc.relation.ispartof Вопросы атомной науки и техники
dc.subject Нерелятивистская плазменная элeктрoника uk_UA
dc.title The silica and silicon luminescence induced by fast hydrogen ions uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA
dc.identifier.udc 533.9


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