Властивості халькогенідних сцинтиляторів на основі сполук А2В6, легованих ізовалентними домішками

Abstract

Problems related to the development of physico-technological foundations of the preparation of scintillation materials on the basis of zinc selenide and other AIIBVI compounds, as well as the complex studies of properties of new chalcogenide scintillators (CS), are considered. The processes of formation and transformation of the complex lattice defects that play the role of luminescence centers in AIIBVI-based CS have been studied. New technological methods have been developed for the preparation of a series of practically important scintillation materials of high efficiency, with the absolute light output up to 7 · 104 photon/MeV, a diversity of spectral-kinetic luminescence properties, and the radiation stability up to 109 rad. It has been shown that such specific features of CS properties as the high light output, relatively small atomic number, ''fast'' or ''slow'' scintillation kinetics, very low afterglow level (less than 0.001%), allow the development of novel detection systems for multienergy radiography with improved sensitivity, as well as other radiation sensitive devices.