Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Yusupov, M.M."

Результати 1-3 з 3

Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

Moscal, D.S.; Fedorenko, L.L.; Yusupov, M.M.; Golodenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a ...
Refractory contact to a-SiC produced by laser technology methods

Fedorenko, L.L.; Kiseleov, V.S.; Svechnikov, S.V.; Yusupov, M.M.; Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

Developed in the paper are method and technological scheme to obtain ohmic contacts (OC) to a-SiC(:N), Nd - Na ~1 - 3.10¹⁸ cm⁻³ by pulse laser deposition (PLD) of multilayer structures Ni/W/Si₃N₄/W and the following laser ...
The influence of Cr concentration on time resolution of GaAs detectors

Fedorenko, L.L.; Linnik, L.F.; Linnik, L.G.; Yusupov, M.M.; Solovyov, E.A.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)

Investigated in this work were the influence of Cr dopant concentration and technological conditions of doping on photoconductivity (PhC) kinetics, dependence of PhC signal magnitude on voltage applied as well as the dynamic ...

Результати 1-3 з 3

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