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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Chernobai, V.A."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Chernobai, V.A."

Сортувати за: Порядок: Результатів:

  • Primachenko, V.E.; Fedorenko, L.L.; Tsyrkunov, Yu.A.; Zinio, S.A.; Kirillova, S.I.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Current creation caused by water decomposition Н₂О → ОН+Н has been investigated for the case of an Yb-Si electrode pair after the preliminary covering of Si electrodes with transition metal (Ni, Ti, Cr) films, as well ...
  • Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this work, we continue to study the revealed phenomenon of current creation in the electrochemical system with distilled water during its decomposition without any applied external voltage. Investigated are catalytically ...
  • Kirillova, S.I.; Primachenko, V.E.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films ...
  • Primachenko, V.E.; Kirillova, S.I.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO₂ structures prepared mainly using thermal oxidation ...
  • Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have investigated the current creation accompanied by the water decomposition H₂O → OH + H caused by various catalytically active electrodes with different electrochemical potentials, both without external electric ...
  • Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...

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