Vlaskina, S.I.; Vlaskin, V.I.; Podlasov, S.A.; Rodionov, V.E.; Svechnikov, G.S.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
Diffusion of boron, aluminum, and oxygen was conducted at temperatures
1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely
method annealed in oxygen during 2 h at 1700 °C, in argon during ...