Germanium quantum well with two subbands occupied: kinetic properties

dc.contributor.author	Berkutov, I.B.
dc.contributor.author	Andrievskii, V.V.
dc.contributor.author	Komnik, Y.F.
dc.contributor.author	Mironov, O.A.
dc.date.accessioned	2021-01-31T16:01:38Z
dc.date.available	2021-01-31T16:01:38Z
dc.date.issued	2017
dc.identifier.citation	Germanium quantum well with two subbands occupied: kinetic properties / I.B. Berkutov, V.V. Andrievskii, Y.F. Komnik, O.A. Mironov // Физика низких температур. — 2017. — Т. 43, № 10. — С. 1515-1521. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 72.20.My, 73.20.Fz
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/175226
dc.description.abstract	Multisubband transport of the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands. This allows us to determine the densities and mobilities of the charge carriers on each subband. Shubnikov–de Haas oscillations reveal two 2D conduction subbands with carrier effective masses of 0.112m₀ and 0.131m₀. The quantum Hall ferromagnetic states which results from the crossing of two Landau levels with opposite spin and different subband was observed in SiGe systems for the first time.	uk_UA
dc.description.sponsorship	The authors are grateful to O. E. Raichev for useful discussions. Measurements were made in International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Квантовые эффекты в полупpоводниках и диэлектриках	uk_UA
dc.title	Germanium quantum well with two subbands occupied: kinetic properties	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA