Integrated detectors of ionizing radiation based on ZnSe(Te)/pZnTe-nCdSe structures

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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2008, том 15
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Functional Materials, 2008, № 1
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dc.contributor.author	Starzhinskiy, N.G.
dc.contributor.author	Grinyov, B.V.
dc.contributor.author	Gashin, P.A.
dc.contributor.author	Focsha, A.A.
dc.contributor.author	Galat, A.B.
dc.contributor.author	Ryzhikov, V.D.
dc.contributor.author	Katrunov, K.A.
dc.contributor.author	Zenya, I.M.
dc.date.accessioned	2018-06-17T09:15:37Z
dc.date.available	2018-06-17T09:15:37Z
dc.date.issued	2008
dc.identifier.citation	Integrated detectors of ionizing radiation based on ZnSe(Te)/pZnTe-nCdSe structures / N.G. Starzhinskiy, B.V. Grinyov, P.A. Gashin, A.A. Focsha, A.B. Galat, V.D. Ryzhikov, K.A. Katrunov, I.M. Zenya // Functional Materials. — 2008. — Т. 15, № 1. — С. 115-118. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/137234
dc.description.abstract	A new type of solid state integrated detector of ionizing radiation has been proposed. It has been shown that the properties of ZnSe(Te) crystals make it possible to develop integrated detectors with photoreceivers of a photosensitive heterostructure type arranged directly on the scintillator surface. A preparation method of ZnSe(Te)/pZnTe—nCdSe detectors has been described and the output characteristics thereof have been obtained.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Technology	uk_UA
dc.title	Integrated detectors of ionizing radiation based on ZnSe(Te)/pZnTe-nCdSe structures	uk_UA
dc.title.alternative	Інтегральні детектори іонізуючої радіації на основі структури ZnSe(Te)/pZnTe-nCdSe	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA