Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2008, том 15
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Functional Materials, 2008, № 1
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dc.contributor.author	Kulyk, S.P.
dc.contributor.author	Melnichenko, M.M.
dc.contributor.author	Svezhentsova, K.V.
dc.contributor.author	Shmyryova, O.M.
dc.date.accessioned	2018-06-17T09:08:19Z
dc.date.available	2018-06-17T09:08:19Z
dc.date.issued	2008
dc.identifier.citation	Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/137225
dc.description.abstract	The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of a homogeneous nanostructure on the initial substrate microrelief. For the first time it has been shown that the spectrum of electron states changes considerably during the growth of a nanostructured silicon film.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Characterization and properties	uk_UA
dc.title	Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy	uk_UA
dc.title.alternative	Вивчення наноструктурованих плівок монокристалічного кремнію методом сканувальної тунельної спектроскопії	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA