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dc.contributor.author Luzanov, A.V.
dc.date.accessioned 2018-06-16T16:34:54Z
dc.date.available 2018-06-16T16:34:54Z
dc.date.issued 2017
dc.identifier.citation Kirchhoff and electron curvature indexes for SiC nanoclusters / A.V. Luzanov // Functional Materials. — 2017. — Т. 24, № 3. — С. 434-441. — Бібліогр.: 35 назв. — англ. uk_UA
dc.identifier.issn 1027-5495
dc.identifier.other DOI: https://doi.org/10.15407/fm24.03.434
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/136807
dc.description.abstract To characterize carborundum nanoclusters (nano-SiC) we employ the topological Kirchhoff index and average energy of molecular graphs. Additionally, electron-kinematic indexes which reflect an average curvature of electron paths in molecule, are invoked. The main polytypes, namely, 3C-SiC and 2pH-SiC, p = 1÷4, are investigated. It is established that the topological indexes make only a slight distinction between nano-SiC of the different polytypes. Quite the opposite, the electron curvature indexes provide a clear discrimination of the polytypes. In particular, the curvature indexes are ordered just in the same manner as the hexagonality measure known for such polytypes. For the electron curvatures, an effective algorithm is elaborated, allowing us to analyze nano-SiC with 10⁴ and more atoms even by using laptops. uk_UA
dc.language.iso en uk_UA
dc.publisher НТК «Інститут монокристалів» НАН України uk_UA
dc.relation.ispartof Functional Materials
dc.subject Modeling and simulation uk_UA
dc.title Kirchhoff and electron curvature indexes for SiC nanoclusters uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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