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dc.contributor.author Sheripov, U.
dc.contributor.author Zhanabergenov, Zh.
dc.contributor.author Uteniyazov, A.
dc.contributor.author Ismailov, K.
dc.contributor.author Karazhanov, S.
dc.date.accessioned 2018-06-15T06:00:51Z
dc.date.available 2018-06-15T06:00:51Z
dc.date.issued 2012
dc.identifier.citation Ti-derived intermediate band in MgH₂ / U. Sheripov, Zh. Zhanabergenov, A. Uteniyazov, K. Ismailov, S. Karazhanov // Functional Materials. — 2012. — Т. 19, № 4. — С. 520-524. — Бібліогр.: 18 назв. — англ. uk_UA
dc.identifier.issn 1027-5495
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/135364
dc.description.abstract This article deals with a study of electronic structure of Ti-doped MgH₂ by the first-principles calculations. We show that Ti impurity substituting Mg (TiMmg) forms an intermediate band in the band gap of MgH₂, which is partially filled with electrons. However, the intermediate bands are well localized around Ti impurity. So, the effective masses of electrons in this intermediate band can be said to be infinite, it means that the electrons in these bands are immobile, and MgH₂:Ti remains to be an insulator. The energy estimated from the topmost valence band (conduction band) to Fermi level is ≥ 2.8 eV. Since the band gap of MgH₂ is ~ 5.6 eV, the energy between the conduction band minimum and Fermi level is also 2.8 eV. So despite presence of the intermediate band MgH₂ remains to be transparent to the visible part of the solar spectra and slightly reflective to the infrared light with very low light absorption. uk_UA
dc.language.iso en uk_UA
dc.publisher НТК «Інститут монокристалів» НАН України uk_UA
dc.relation.ispartof Functional Materials
dc.subject Modeling and simulation uk_UA
dc.title Ti-derived intermediate band in MgH₂ uk_UA
dc.title.alternative Дослідження електронної структури MgH₂:Ti uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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